| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate which is used for a light emitting element such as a light emitting diode or laser diode, or a light receiving element such as a solar cell or optical sensor and is excellent in crystallinity in a wide range by reducing the crystal defects of the substrate comprising a nitride semiconductor. SOLUTION: A method for producing the objective nitride semiconductor substrate comprises forming the seed crystal 2 of the nitride semiconductor on a substrate 1 different therefrom, forming a protective film 4, on the upper part of which the nitride semiconductor does not grow, and then growing a second nitride semiconductor layer 6 in a transverse direction from the edge face of a first nitride semiconductor layer 5 formed only by a transversely directional growth. |
