Monolithic device with acoustically isolated or decoupled FBAR-type resonator

摘要

The monolithic device 10 includes an FBAR-type acoustic resonator 12 vertically integrated with electronic circuitry, e.g. transistor 40 upon a substrate 16. An acoustically isolating or decoupling layer 18 is deposited over the circuitry. A depression 20 is etched in the isolation structure 18, and then the FBAR-type resonator 12 is placed over the depression 20. A cap layer 26 bearing electrical connectors 30-34 is then placed over the device 10.