发明名称 THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL, AND MANUFACTURING METHOD THEREOF
摘要 <p>The present invention relates to a TFT, a TFT array panel, and a method of manufacturing the TFT array panel. A method of manufacturing the TFT array panel includes the steps of forming a first electrode and a second electrode that are separated from each other on a substrate, forming a silicon layer including amorphous silicon and polycrystalline silicon on the substrate, forming a semiconductor by patterning the silicon layer, forming a gate insulating layer on the semiconductor, forming a third electrode that is opposite to the semiconductor on the gate insulating layer, forming a passivation layer on the third electrode, and forming a pixel electrode on the passivation layer. The TFT array panel has high mobility because the TFT include polycrystalline silicon at the channel region of the TFT.</p>
申请公布号 KR20060099658(A) 申请公布日期 2006.09.20
申请号 KR20050021014 申请日期 2005.03.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JOON HOO;GOH, JOON CHUL;CHOI, BEOHM ROCK
分类号 H01L29/786;G02F1/136 主分类号 H01L29/786
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