发明名称 |
THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL, AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>The present invention relates to a TFT, a TFT array panel, and a method of manufacturing the TFT array panel. A method of manufacturing the TFT array panel includes the steps of forming a first electrode and a second electrode that are separated from each other on a substrate, forming a silicon layer including amorphous silicon and polycrystalline silicon on the substrate, forming a semiconductor by patterning the silicon layer, forming a gate insulating layer on the semiconductor, forming a third electrode that is opposite to the semiconductor on the gate insulating layer, forming a passivation layer on the third electrode, and forming a pixel electrode on the passivation layer. The TFT array panel has high mobility because the TFT include polycrystalline silicon at the channel region of the TFT.</p> |
申请公布号 |
KR20060099658(A) |
申请公布日期 |
2006.09.20 |
申请号 |
KR20050021014 |
申请日期 |
2005.03.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JOON HOO;GOH, JOON CHUL;CHOI, BEOHM ROCK |
分类号 |
H01L29/786;G02F1/136 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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