A PHASE-CHANGE MEMORY DEVICE REDUCING CONTACT AREA OF PHASE-CHAGE MATERIAL LAYER USING METAL DENDRITE AND A FABRICATION METHOD THEREOF,申请号KR20050021084-传众专利搜索

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发明名称	A PHASE-CHANGE MEMORY DEVICE REDUCING CONTACT AREA OF PHASE-CHAGE MATERIAL LAYER USING METAL DENDRITE AND A FABRICATION METHOD THEREOF
摘要
申请公布号	KR20060099701(A)	申请公布日期	2006.09.20
申请号	KR20050021084	申请日期	2005.03.14
申请人	KOREA UNIVERSITY INDUSTRY AND ACADEMY COOPERATIONFOUNDATION	发明人	LEE, HEON;KIM, BONG HOON;HONG, SUNG HUN
分类号	H01L27/115;H01L21/8247	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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