发明名称 Point source light-emitting diode
摘要 A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the light-emitting surface of the epitaxy structure. The first electrode is located on the substrate, and the isolation layer is located on the epitaxy structure adjacent to the first electrode. The contact layer is located on the first electrode, and the bonding layer is located on one portion of the isolation layer. The connection bridge with a width less than one half of the diameter of the light emitting area is located on the other portion of the isolation layer, thereby connecting the contact layer and the bonding layer.
申请公布号 US7109525(B2) 申请公布日期 2006.09.19
申请号 US20040008390 申请日期 2004.12.10
申请人 EPISTAR CORPORATION 发明人 YEN TZU-YING;LAI HAN-TSUN;WU JEN-CHAU;TU CHUNG-CHENG
分类号 H01L33/12;H01L33/14;H01L33/20;H01L33/28;H01L33/30;H01L33/38;H01L33/42 主分类号 H01L33/12
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