发明名称 Capacitor for semiconductor device and method of forming the same
摘要 A capacitor for a semiconductor device includes a lower electrode, a dielectric layer formed on a lower electrode, and an upper electrode formed on the dielectric layer. The lower electrode includes a first layer having a cylindrical shape and a mesh second layer formed on inner sidewalls and the bottom surface of the first layer. Beneficially, the first layer is connected to a conductive region of a semiconductor substrate by a contact plug. The lower electrode can be formed by injecting a catalyst into an opening in which the cylindrical first layer is to be formed before forming the cylindrical first layer.
申请公布号 US7109081(B2) 申请公布日期 2006.09.19
申请号 US20040997866 申请日期 2004.11.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE YEONG-CHEOL
分类号 H01L21/8242;H01L27/108;H01L21/02;H01L21/20 主分类号 H01L21/8242
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