发明名称 |
Capacitor for semiconductor device and method of forming the same |
摘要 |
A capacitor for a semiconductor device includes a lower electrode, a dielectric layer formed on a lower electrode, and an upper electrode formed on the dielectric layer. The lower electrode includes a first layer having a cylindrical shape and a mesh second layer formed on inner sidewalls and the bottom surface of the first layer. Beneficially, the first layer is connected to a conductive region of a semiconductor substrate by a contact plug. The lower electrode can be formed by injecting a catalyst into an opening in which the cylindrical first layer is to be formed before forming the cylindrical first layer.
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申请公布号 |
US7109081(B2) |
申请公布日期 |
2006.09.19 |
申请号 |
US20040997866 |
申请日期 |
2004.11.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE YEONG-CHEOL |
分类号 |
H01L21/8242;H01L27/108;H01L21/02;H01L21/20 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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