发明名称 System and method for hydrogen-rich selective oxidation
摘要 The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.
申请公布号 US7109131(B2) 申请公布日期 2006.09.19
申请号 US20030456850 申请日期 2003.06.06
申请人 AVIZA TECHNOLOGY, INC. 发明人 HERRING ROBERT B.;PORTER COLE;DODWELL TRAVIS;NAZARENO ED;RATLIFF CHRIS;CHATTERJI ANINDITA
分类号 H01L21/31;H01L21/316;C23C16/00;H01L21/00;H01L21/469;H01L29/76 主分类号 H01L21/31
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