| 摘要 |
<p>Disclosed herein is a parallel capacitor of a semiconductor device. According to the present invention, a first capacitor and a second capacitor are formed in different layers of the same region, wherein a metal layer connected to an upper electrode of the first capacitor is formed in the same layer as a metal layer connected to a lower electrode of the second capacitor. Thus, two capacitors can be connected in parallel only with a metal layer composed of three layers. Accordingly, the present invention is advantageous in that it can reduce process steps for forming multiple metal layers, lower a step and cut manufacture cost.</p> |
