发明名称 Low gate oxide stress power amplifier
摘要 A power amplifier includes an input transistor, an output transistor, and circuitry. The input transistor includes an input, a first node, and a second node, wherein the second node of the input transistor is coupled to a supply voltage return and the input of the input transistor operably coupled to receive an outbound radio frequency (RF) signal. The output transistor includes an input, a first node, and a second node, wherein the first node of the output transistor is coupled to provide an output of the power amplifier, the second node of the output transistor is coupled to the first node of the input transistor. The circuitry is operably coupled to provide an enabling bias voltage to the input of the input transistor and to the input of the output transistor during the transmit mode and to provide a disabling bias voltage to the input of the input transistor and to the input of the output transistor during the power down mode, wherein the disabling bias voltage is of a value to distribute gate oxide stress between the input transistor and the output transistor.
申请公布号 US7109801(B2) 申请公布日期 2006.09.19
申请号 US20050069657 申请日期 2005.03.01
申请人 BROADCOM CORPORATION 发明人 LI QIANG (THOMAS)
分类号 H03F1/52;H03F1/30;H03F3/45;H03F3/72 主分类号 H03F1/52
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