Method to improve drive current by increasing the effective area of an electrode

摘要

The present invention provides source/drain electrode 100 for a transistor 105 . The source/drain electrode 100 comprises a plurality of polysilicon grains 100 located over a source/drain region 115 . A metal salicide layer 120 conformally coats the plurality of polysilicon grains. The present invention also includes a method of fabricating the above described source/drain electrode 200 , and integrated circuit 800 have includes a semiconductor device 805 having the described source/drain electrodes 810.