发明名称 Plasma processing device and baffle plate thereof
摘要 A plasma processing device is able to positively enhance a process-gas exhaust efficiency in a processing region and restrict plasma leaking. A processing container of a magnetron type parallel plate plasma processing device has a separator for separating the inside of the processing container into a processing region and an exhaust region. The separator has a plurality of gas passage holes to establish communication between the processing region and the exhaust region, and consists of a non-conductive member. A conductive member is disposed on a gas passage-side surface facing the gas passage holes. A voltage V is applied by a power supply to the conductive member so that the gas passage-side surface is at a potential higher than that of a processing-region surface.
申请公布号 US7109660(B2) 申请公布日期 2006.09.19
申请号 US20040508700 申请日期 2004.09.29
申请人 TOKYO ELECTRON LIMITED 发明人 ISHIHARA HIROYUKI;ARAKI YOUICHI;TAKAHASHI TOSHIKI;KUBO TAKUYA;ITO ATSUSHI;ONO YOKO
分类号 H01J7/24;H05H1/46;B01J19/08;C23C16/455;C23C16/50;H01J37/32;H01L21/205;H01L21/3065 主分类号 H01J7/24
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