发明名称 Semiconductor circuit with protective circuit
摘要 A semiconductor circuit in a semiconductor substrate includes a first input for feeding a first supply potential, a second input for feeding a second supply potential higher than the first supply potential, a device, an output and a parasitic pn-junction between the device and the semiconductor substrate, which is conductive at a first polarizing potential at the output smaller than the first supply potential or at a second polarizing potential at the output greater than the second supply potential. A protective circuit whose electric resistance at the first polarizing potential at the output and at the second polarizing potential at the output, respectively, is higher than at a normal operation potential at the output lying between the first supply potential and the second supply potential is connected between the output and the parasitic pn-junction.
申请公布号 US7110232(B2) 申请公布日期 2006.09.19
申请号 US20040813729 申请日期 2004.03.31
申请人 INFINEON TECHNOLOGIES AG 发明人 AUSSERLECHNER UDO
分类号 H02H3/20;H01L23/62;H01L27/02;H02H3/24;H02H9/00 主分类号 H02H3/20
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