发明名称 |
Memory cell with non-destructive one-time programming |
摘要 |
A one-time programmable memory cell and the programming thereof including a programming transistor which is disposed in series with a polycrystalline silicon programming resistor forming the memory element. The programming is non-destructive with respect to the polycrystalline silicon resistor.
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申请公布号 |
US7110277(B2) |
申请公布日期 |
2006.09.19 |
申请号 |
US20050504273 |
申请日期 |
2005.01.27 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
WUIDART LUC;BARDOUILLET MICHEL;MALHERBE ALEXANDRE |
分类号 |
G11C17/00;G11C16/22;G11C17/14 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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