| 摘要 |
A semiconductor device which achieves reductions in malfunctions and operating characteristic variations by reducing the gain of a parasitic bipolar transistor, and a method of manufacturing the same are provided. A silicon oxide film ( 6 ) is formed partially on the upper surface of a silicon layer ( 3 ). A gate electrode ( 7 ) of polysilicon is formed partially on the silicon oxide film ( 6 ). A portion of the silicon oxide film ( 6 ) underlying the gate electrode ( 7 ) functions as a gate insulation film. A silicon nitride film ( 9 ) is formed on each side surface of the gate electrode ( 7 ), with a silicon oxide film ( 8 ) therebetween. The silicon oxide film ( 8 ) and the silicon nitride film ( 9 ) are formed on the silicon oxide film ( 6 ). The width (W 1 ) of the silicon oxide film ( 8 ) in a direction of the gate length is greater than the thickness (T 1 ) of the silicon oxide film ( 6 ).
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