发明名称 Thin-film bulk acoustic oscillator and method of manufacturing same
摘要 A thin-film bulk acoustic oscillator comprises: a base; a barrier layer disposed on the base; a lower electrode disposed on the barrier layer; a piezoelectric thin film disposed on the lower electrode; and an upper electrode disposed on the piezoelectric thin film. The piezoelectric thin film includes a columnar crystal that extends in the direction intersecting the film surface. The top surface of the piezoelectric thin film is flattened by polishing so as to have a root mean square roughness of 2 nm or smaller.
申请公布号 US7109637(B2) 申请公布日期 2006.09.19
申请号 US20040814120 申请日期 2004.04.01
申请人 TDK CORPORATION 发明人 KOMURO EIJU;SAITOU HISATOSHI;YAMASHITA YOSHINARI
分类号 H01L41/04;H01L41/09;H01L41/08;H01L41/18;H01L41/187;H01L41/22;H03H3/02;H03H9/02;H03H9/15;H03H9/17 主分类号 H01L41/04
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