发明名称 Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
摘要 A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.
申请公布号 US7109311(B2) 申请公布日期 2006.09.19
申请号 US20040776159 申请日期 2004.02.12
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 OHSAWA YOUICHI;KOBAYASHI KATSUHIRO;YANAGI YOSHITAKA;MAEDA KAZUNORI
分类号 C07C317/28;C08F12/24;G03F7/004;G03F7/038;G03F7/039;H01L21/027 主分类号 C07C317/28
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