发明名称 |
Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process |
摘要 |
A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.
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申请公布号 |
US7109311(B2) |
申请公布日期 |
2006.09.19 |
申请号 |
US20040776159 |
申请日期 |
2004.02.12 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OHSAWA YOUICHI;KOBAYASHI KATSUHIRO;YANAGI YOSHITAKA;MAEDA KAZUNORI |
分类号 |
C07C317/28;C08F12/24;G03F7/004;G03F7/038;G03F7/039;H01L21/027 |
主分类号 |
C07C317/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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