MANUFACTURING METHOD FOR CAPACITOR HAVING TUNGSTEN DOUBLE LAYER FOR COMPENSATING STRESS
摘要
申请公布号
KR20060097865(A)
申请公布日期
2006.09.18
申请号
KR20050018743
申请日期
2005.03.07
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KWON, THOMAS JONG WAN;KIM, SUNG TAE;KIM, YOUNG SUN;YOO, CHA YOUNG;PARK, YOUNG GEUN;CHOI, JAE HYOUNG;CHUNG, EUN AE;YEO, JAE HYUN;IM, KI VIN;CHUNG, JUNG HEE
