PMOS TFT INCLUDING LIGHTLY DOPED DRAIN AND FABRICATION METHOD OF THE SAME,申请号KR20040010489-传众专利搜索

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发明名称	PMOS TFT INCLUDING LIGHTLY DOPED DRAIN AND FABRICATION METHOD OF THE SAME
摘要
申请公布号	KR100623248(B1)	申请公布日期	2006.09.18
申请号	KR20040010489	申请日期	2004.02.17
申请人		发明人
分类号	H01L29/786;H01L21/00;H01L21/336;H01L21/84	主分类号	H01L29/786
代理机构		代理人
主权项
地址

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