| 摘要 |
<p>Disclosed herein is a method for forming metal, semiconductor or insulator patterns. The method comprises the steps of: (S 302 ) forming metal, semiconductor or insulator patterns 202 with the larger sizes or linewidths by the prior method; and (S 306 ) reducing the sizes or linewidths of the patterns 202 by etching the patterns 202 using a physical or mechanical process, or by etching the patterns 202 using a chemical process, or by decomposing the patterns 202 from the outermost portion thereof.</p> |
