| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device of which the diameter of an aluminum wire is not determined by chip size of a power semiconductor element. <P>SOLUTION: First and second connection electrodes are so separated and formed as to face each other on an emitter electrode of an IGBT 1. First and second connection electrodes are so formed on an anode electrode of a diode 2 as to be separated to face each other as well. A first electrode wiring 5A bent inside is formed from one side 4SP1 of a lead-out electrode 4, and a second electrode wiring 5B is so separated and formed as to face the first electrode wiring 5A each other from the other side 4SP2 as well. The first and second electrode wiring parts 5A and 5B positioned to face the IGBT1 are soldered only to the first and second connection electrodes, respectively. Likewise, the first and second electrode wiring parts 5A and 5B positioned to face the diode 2 are soldered only to the first and second connection electrode, respectively. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
