| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device, improved in a light take-out efficiency, and the manufacturing method of the semiconductor light emitting device. <P>SOLUTION: The semiconductor light emitting device 70 is provided with a substrate 10 with a first and a second main surfaces as well as translucency with respect to the light of a first wavelength band, and a semiconductor laminate 19 provided on the first main surface and comprising a light emitting layer which emits the light of the first wavelength band. In this case, the substrate is provided on the side surface thereof with a recess 28 so that a section between the first main surface and the second main surface becomes smaller substantially than the first and second main surfaces. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
