发明名称 |
Multi-level flash memory cell capable of fast programming |
摘要 |
A semiconductor device and a method of forming the same. The semiconductor device comprises a gate structure comprising a tunnel oxide over a substrate; a floating gate over the tunnel oxide; a dielectric over the floating gate; and a control gate over the dielectric. The semiconductor device further comprises: spacers along opposite edges of the gate structure; a first impurity region doped with a first type of dopant laterally spaced apart from a first edge of the gate structure; and a second impurity region doped with a second type of dopant, opposite from the first type, the drain being substantially under the drain spacer and substantially aligned with a second edge of the gate structure.
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申请公布号 |
US2006202254(A1) |
申请公布日期 |
2006.09.14 |
申请号 |
US20050077479 |
申请日期 |
2005.03.10 |
申请人 |
LAI LI-SHYUE;CHEN HUNG-WEI;LEE WEN-CHIN;CHI MIN-HWA |
发明人 |
LAI LI-SHYUE;CHEN HUNG-WEI;LEE WEN-CHIN;CHI MIN-HWA |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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