Shallow-junction fabrication in semiconductor devices via plasma implantation and deposition

摘要

A method for fabricating a semiconductor-based device includes disposing a substrate in a process chamber of a process tool, plasma implanting a dopant species from a plasma into a portion of the substrate in the process chamber, and plasma depositing a diffusion barrier on the implanted portion of the substrate prior to removing the at least one substrate from the process tool. The diffusion barrier can be deposited in the same chamber as that used for dopant implantation or a different chamber of the process tool.