| 摘要 |
A method for manufacturing a semiconductor device includes the steps of (a) forming a gate insulating film above a semiconductor substrate, (b) forming a first conductive film on the gate insulating film, (c) forming a first insulating film pattern on the first conductive film, (d) selectively forming a first impurity diffusion layer in the semiconductor substrate by ion implantation, (e) selectively forming a first selective insulating film that overlaps with the first impurity diffusion layer in a self-alignment fashion in the first conductive film, (f) forming a gate electrode that has a gate edge self-aligned with the first impurity diffusion layer and overlaps with the first impurity diffusion layer in a self-alignment fashion, and (g) selectively forming a second impurity diffusion layer that is located adjacent to the first impurity diffusion layer and is self-aligned with the gate edge by ion implantation.
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