发明名称 256 MEG DYNAMIC RANDOM ACCESS MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To obtain the optimal chip layout under restrictions in arranging pins and to provide power supply architecture in which a device can perform appropriate operation in the shortest period of time. <P>SOLUTION: The power supply for a dynamic random access memory is equipped with multiple array blocks and multiple pads arranged in the center of the multiple array blocks, arranged near the multiple pads and equipped with multiple voltage source for generating the supply voltage to the multiple array blocks. The multiple voltage source is equipped with a voltage regulator having multiple power amplifiers, and at least one power amplifier is related with each of the multiple array blocks. In order to attain the setup output power level, the multiple voltage sources include voltage pumps having multiple voltage pump circuits divided into multiple groups for performing either of separate or simultaneous operation. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006244695(A) 申请公布日期 2006.09.14
申请号 JP20060062110 申请日期 2006.03.08
申请人 MICRON TECHNOLOGY INC 发明人 KEETH BRENT;BUNKER LAYNE G;DERNER SCOTT J;TAYLOR RONALD L;MULLIN JOHN S;BEFFA RAYMOND J;ROSS FRANK F;KINSMAN LARRY D
分类号 G11C11/401;G11C11/407;G11C5/02;G11C5/06;G11C11/4074;G11C11/4076;G11C11/4097;G11C29/04;G11C29/14;H01L21/822;H01L21/8242;H01L27/04;H01L27/108 主分类号 G11C11/401
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