| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor using a physical property transformation layer, its performance, and a manufacturing method. SOLUTION: The transister comprises an insulating film 42 formed on a substrate, a first conductive layer pattern 44a and a second conductive layer pattern 44b spaced on the insulating film 42, a physical property transformation layer 46 formed on the insulating film 42 between the first conductive layer pattern 44a and the second conductive layer pattern 44b, a high dielectric film 48 stacked on the physical property transformation layer 46, and a gate electrode 50 formed on the high dielectric film 48. COPYRIGHT: (C)2006,JPO&NCIPI
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