| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of suppressing a leak current, and a method of manufacturing the semiconductor laser. SOLUTION: The semiconductor laser 1 is provided with a group III-V compound semiconductor layer 5, an active layer 7 provided on the group III-V compound semiconductor layer 5, and a group III-V compound semiconductor layer 9 provided on the active layer 7 and containing a phosphorous element. The semiconductor laser 1 is also provided with a group III-V compound semiconductor layer 11 provided on the group III-V compound semiconductor layer 9 and containing a phosphorous element, and a group III-V compound semiconductor layer 13 provided on the group III-V compound semiconductor layer 11 and containing an arsenic element. A current constriction layer 12 is configured by the group III-V compound semiconductor layer 11 and the group III-V compound semiconductor layer 13. COPYRIGHT: (C)2006,JPO&NCIPI
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