发明名称 Semiconductor device, semiconductor memory device and data strobe method
摘要 Semiconductor devices having an interface of an open drain or a pseudo-open drain type are provided, and the semiconductor devices include a data strobe (DQS) control signal generating circuit, a DQS control circuit and an output unit. The generating circuit generates a first DQS control signal and a second DQS control signal, and the control circuit controls a data strobe signal by sequentially changing a state of a following section next to a postamble section of the data strobe signal in response to a clock signal; the first and second DQS control signals, from a first logical state of the postamble section to a second logical state, and then from the second logical state to a high impedance state after a first predetermined time. Operations at a high frequency may be possible by controlling a data strobe signal. Related controlling methods are provided.
申请公布号 US2006203573(A1) 申请公布日期 2006.09.14
申请号 US20060371831 申请日期 2006.03.09
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 KIM JOUNG-YEAL;PARK KWANG-IL;KIM SUNG-HOON
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
主权项
地址