| 摘要 |
A non-volatile memory device having a split gate type cell structure, a method for fabricating the same, and a method for fabricating a semiconductor device by using the same are provided. A non-volatile memory device includes a substrate, a plurality of patterned tunnel insulation layers formed on the substrate, a plurality of floating gates formed on the patterned tunnel insulation layers, a plurality of patterned dielectric layers to cover upper portions and sidewalls of the floating gates, a plurality of selection gates formed on sidewalls of the patterned dielectric layers, and a plurality of source/drain regions formed in the substrate exposed at one sides of the selection gates and one sides of the floating gates.
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