| 摘要 |
The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R 1 of a piezoelectric film 52 A formed on an electrode film 46 A of a laminate 60 is located inside an outer edge R 2 of the electrode film 46 A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61 , where an etching solution permeates between polyimide 72 and laminate 60 , the etching solution circumvents the electrode film 46 A before it reaches the piezoelectric film 52 A. Namely, a route A of the etching solution to the piezoelectric film 52 A is significantly extended by the electrode film 46 A. In the method of making the electronic device 74 , therefore, the etching solution is less likely to reach the piezoelectric film 52 A. It significantly suppresses a situation of dissolution of the piezoelectric film 52 A and realizes improvement in characteristics of the piezoelectric device 74 made.
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