| 摘要 |
A CMOS image sensor includes a plurality of pixels defining an imaging area each pixel includes a photosensitive area that converts incident light into a charge; a first transistor having a transfer gate that transfers charge from the photosensitive area to a charge-to-voltage region; a second transistor that resets the voltage of the charge-to-voltage region; a third transistor that amplifies voltage from the charge-to-voltage region; and a select mechanism positioned outside the imaging area on the image sensor that selects a predefined number of pixels for readout from the third transistor.
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