METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem that it is difficult to simultaneously form a high-quality thick SiC crystal layer and a high-quality nitride semiconductor layer on a 4H- or 6H-type SiC substrate, and it is impossible to achieve a white color light emitting diode having a high efficiency and a high color rendering property.

SOLUTION: A method of manufacturing a semiconductor substrate is used which includes a process of conducting the epitaxial growth of the SiC crystal layer on the 4H- or 6H-type c-surface SiC substrate having a tilt angle in the range between 1° to 6° using a proximity sublimation method having a tendency of step flow growth, and a process of growing a plurality of nitride semiconductor layers on the SiC crystal layer. By using this semiconductor substrate, a structure of the white color light emitting diode is provided with a high efficiency and a high color rendering property.

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