METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To realize a semiconductor device in which resistivity of silicon in a source/drain region is sufficiently decreased to obtain performance as a transistor. SOLUTION: In a method of manufacturing a semiconductor device, a silicon integrated circuit is formed on a glass substrate. The method includes a step 14 of preparing a glass substrate; a step 22 of forming a silicon layer on the glass substrate; a step 42 of implanting ions into an active region of the silicon layer; a step 50 of covering the silicon layer by a heat pad material; a step 52 of activating ions in the silicon layer by annealing the glass substrate while keeping the substrate at a temperature of not more than the thermal equilibrium temperature; a step 54 of removing the heat pad material; and a step of completing the silicon integrated circuit. COPYRIGHT: (C)2006,JPO&NCIPI