| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic storage device which can be highly integrated and employs a magneto-resistive element in a memory cell. SOLUTION: The magnetic storage device includes a plurality of variable resistor elements R connected in parallel between a first node and a second node with their resistance values varying depending on stored information, a selection transistor 14 connected with the first node for selecting a plurality of the variable resistor elements R, and a bit line BL connected with the second node. A plurality of current paths containing the elements R between the first and second nodes have different resistance values. COPYRIGHT: (C)2006,JPO&NCIPI
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