| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which can increase an effective channel width and can be formed in a small pixel, and also to provide a method for manufacturing the transistor. SOLUTION: The thin film transistor has at least a gate electrode 3, an insulating layer 4, and a semiconductor 7 laminated on a substrate 1 in this order, a source electrode 5 and a drain electrode 6 formed on the upper or lower surface of the semiconductor layer 7 to be spaced in a horizontal direction. The upper surfaces of the gate electrode 3 and the insulating layer 4 have a projection or a recess of a rectangular column shape in a direction of connecting the source electrode 5 and the drain electrode 6. COPYRIGHT: (C)2006,JPO&NCIPI
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