| 摘要 |
PROBLEM TO BE SOLVED: To provide a channel in the sidewall of a semiconductor layer, while suppressing damages to the channel region. SOLUTION: A second semiconductor layer 5 is deposited, by selective epitaxial growth on a first semiconductor layer 3 patterned to expose the side face, surface of the second semiconductor layer 5 is thermally oxidized to form a gate insulation film 6 on the surface of the second semiconductor layer 5, and then a gate electrode 7, arranged so as to extend astride over the second semiconductor layer 5 via the sidewall thereof is formed on an insulating layer 2, thus providing a channel in the sidewall of the second semiconductor layer 5. COPYRIGHT: (C)2006,JPO&NCIPI
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