摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing high purity boron nitride nanotubes by which high purity and high quality boron nitride nanotubes can be manufactured over a wide reaction temperature range. SOLUTION: A mixture of boron (B) powder, iron oxide (FeO) powder and magnesium oxide (MgO) powder is heated in a flow of ammonia gas for a predetermined time to synthesize high purity boron nitride nanotubes. By holding at 1,100-1,700°C for 0.7-3 h, high purity boron nitride nanotubes having a diameter of about 50 nm, a wall thickness of 10-15 nm and a length of several tensμm can be obtained. The nanotubes can be used as a semiconductor material, an emitter material, a heat resistant packing material, a high strength material, a catalyst, etc. COPYRIGHT: (C)2006,JPO&NCIPI
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