发明名称 METHOD FOR MANUFACTURING HIGH PURITY BORON NITRIDE NANOTUBE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing high purity boron nitride nanotubes by which high purity and high quality boron nitride nanotubes can be manufactured over a wide reaction temperature range. SOLUTION: A mixture of boron (B) powder, iron oxide (FeO) powder and magnesium oxide (MgO) powder is heated in a flow of ammonia gas for a predetermined time to synthesize high purity boron nitride nanotubes. By holding at 1,100-1,700°C for 0.7-3 h, high purity boron nitride nanotubes having a diameter of about 50 nm, a wall thickness of 10-15 nm and a length of several tensμm can be obtained. The nanotubes can be used as a semiconductor material, an emitter material, a heat resistant packing material, a high strength material, a catalyst, etc. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006240942(A) 申请公布日期 2006.09.14
申请号 JP20050061321 申请日期 2005.03.04
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 BANDO YOSHIO;CHUNYI ZHI;CHENGCHUN TANG;DMITRI GOLBERG
分类号 C01B21/064;D01F9/08 主分类号 C01B21/064
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