| 摘要 |
The method for forming an SiC-based film comprises the step of generating NH<SUB>3 </SUB>plasma on the surface of a substrate 20 in a chamber to make NH<SUB>3 </SUB>plasma processing on the substrate 20 , the step of removing reaction products containing nitrogen remaining in the chamber, and the step of forming an SiC film 34 on the substrate 20 by PECVD.
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