| 摘要 |
A semiconductor substrate material is disclosed for producing a semiconductor substrate. In an embodiment, the semiconductor substrate material may include a multitude of hollow microspheres. Each one of the multitude of hollow microspheres may have an inner layer and an outer layer. The inner layer may include a first material, the outer layer may include a second material, and the first material and the second material may differ from one another. The first material of the inner layer of each of the multitude of hollow microspheres may have a first melting point, the second material of the outer layer of the multitude of hollow microspheres may have a second melting point, and the first melting point may be higher than the second melting point.
|
