OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

An optical semiconductor device is characterized in that the device is provided with a GaAs substrate (semiconductor substrate) (20); an n-type contact layer (first contact layer) (21) formed on one plane (20a) of the GaAs substrate (20); an active layer (25) which is formed on the n-type contact layer (21) and includes at least a quantum dot (23); a p-type contact layer (second contact layer) (26) which is formed on the active layer (25) and has a conductivity type opposite to that of the n-type contact layer (21); an insulating layer (29) which is formed on the p-type contact layer (26) and has a first opening (29a) having a size that includes a contact region (CR) of the p-type contact layer (26); a p-side electrode layer (33c) which is formed on the contact region (CR) of the p-type contact layer (26) and the insulating layer (29) and is provided with a second opening (33a) included in the first opening (29a); an n-side electrode layer (second electrode layer ) (37) formed on the other plane (20b) of the GaAs substrate (20).