| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a micro-heater capable of preventing a warpage in laminate film structure from being generated, even when thermal expansion is generated in a heating resistance element embedded into the laminate film structure comprising a tensile stress film and a compressive stress film, and a sensor adopting the micro-heater. <P>SOLUTION: In this micro-heater, an insulating layer 200 is constituted by layering on a surface 110 of a semiconductor substrate 100 the lower tensile stress film 211, the lower compressive stress film 212, the upper compressive stress film 221 and the upper tensile stress film 222 in this order. The heating resistance element 400 is clamped between the both compressive stress films 212, 221 to correspond to a cavity part 130 of the semiconductor substrate 100. Each of the compressive stress films 212, 221 is formed of silicon oxide with 0.1μm of thickness. Each of the tensile stress films 211, 222 is formed of Si3<SB>3</SB>N4<SB>4</SB>comprising silicon and nitrogen with 0.2μm of thickness to be brought into a composition ratio of silicon (Si)/nitrogen (N)=3/4. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
