| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a MOS transistor which further reduces the resistor component of metal wiring, can realize the high power/high efficiency of a system power source device and can further reduce the element area. <P>SOLUTION: In the MOS transistor formed so that the source region and the drain region adjoin mutually across the gate formed in a lattice-like form, the MOS transistor is arranged to the corner on a semiconductor chip; a first source bonding pad to which source side metal wiring connected to the drain region is connected and a first drain bonding pad, to which a drain side metal wiring connected to the drain region is connected are provided to the region which adjoins the first chip edge of one corner on the semiconductor chip; and a second drain bonding pad, to which a drain side metal wiring is connected and a second source bonding pad to which a source side metal wiring is connected are provided to the region which adjoins the second chip edge of the corners. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
