| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a CMOS image sensor capable of obtaining a desired working speed and a desired optical sensing property from an element to which a design rule of a hyperfine line width is applied and capable of inhibiting the generation of a leakage current in a floating diffusion area which is a sensing node in a pixel region, a pixel of the image sensor, and a method of manufacturing the image sensor. <P>SOLUTION: The CMOS image sensor is equipped with: a pixel area in which there are provided an embedded type photodiode (BPD) and a floating diffusion area (424A) and there is formed an element constituting a unit pixel; and a logic area in which there is formed a CMOS device processing data outputted from the unit pixel, wherein a salicide blocking layer (450) is formed on the whole upper front surface of the pixel area, and a salicide layer (470) is formed at a gate electrode of the CMOS device in the logic area and an upper front surface in source/drain diffusion areas (426A, 426B). <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
