| 摘要 |
PROBLEM TO BE SOLVED: To achieve high speed, high selecting ratio, high aspect processing and the stable etching characteristics for a long period in dry etching. SOLUTION: In this plasma processing device, plasma is formed with the electromagnetic wave by an UHF-band power supply 104 by using electron cyclotron resonance phenomenon. Furthermore, the electromagnetic wave is emitted from a circular conductor plate 107 arranged at the position facing a sample to be processed 110. Furthermore, the material quality of the circular conductor plate 107 is made to be silicon or graphite. By forming the plasma using the UHF-band power supply 104, low-dissociation plasma can be formed even at the low gas pressure and high density, and the controllability of the reaction is improved. Furthermore, by the reaction with the plasma on the circular conductor plate 107, which also has the electromagnetic-wave emitting function, the effective active species can be increased. COPYRIGHT: (C)2006,JPO&NCIPI
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