发明名称 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR MANUFACTURE BY THE METHOD, AND DISPLAY DEVICE INCLUDING THIN FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To simplify a patterning process while improving the level of pattern precision of an organic semiconductor layer. SOLUTION: The method for manufacturing a thin film transistor comprises a step for forming an organic insulating film on a substrate, forming a bank including first and second concave portions and a third concave portion formed on the first and second concave portions in the organic insulating film, forming a source electrode and a drain electrode in the first and second concave portions, and forming an active layer that comes into contact with the source electrode and the drain electrode in the third concave portion. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006245582(A) 申请公布日期 2006.09.14
申请号 JP20060053545 申请日期 2006.02.28
申请人 SAMSUNG SDI CO LTD 发明人 SUH MIN-CHUL;KOO JAE-BON
分类号 H01L21/336;H01L29/786;H01L51/05;H01L51/40;H01L51/50;H05B33/02;H05B33/10;H05B33/22 主分类号 H01L21/336
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