发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a structure with a portion of each lead exposed on the wall surface of the package to enhance mounting density, wherein stress caused by the difference of thermal expansion coefficients between the semiconductor device and the mounting substrate is relaxed, to improve mountability and reliability. SOLUTION: The method of manufacturing the semiconductor device includes a device body manufacturing step of forming the semiconductor body 90 by electrically connecting the semiconductor chip 11 to each lead 14 and by encapsulating the semiconductor chip 11 with a resin package 17 so that the portion of each lead 14 is exposed; a honing step of honing processing at least the resin flash adhering on the portion of the leads 14, exposed from the resin package 17 using a polishing liquid; an etching step of removing an unwanted laminating member 55 formed on the leads 14; and a plating step of forming a plated film composed of a soft bonding material on the leads 14. The honing step removes a portion of the unwanted laminating member 55, in addition to the resin flash. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006245607(A) 申请公布日期 2006.09.14
申请号 JP20060129328 申请日期 2006.05.08
申请人 FUJITSU LTD 发明人 KAWASHIMA TOYOSHIGE;SATO MITSUTAKA;FUJISAWA TETSUYA;SEKI MASAAKI;HAYASHIDA KATSUHIRO;HAMANO TOSHIO
分类号 H01L23/50;H01L21/56 主分类号 H01L23/50
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