| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a horizontal diode in which high-speed switching (for example, high-speed turn off) is enabled while diode breakdown voltage is kept at a specified value by proving a discharge channel for stored minority carriers. SOLUTION: This semiconductor device comprises a first conductive type semiconductor layer, a second conductive type first semiconductor region which is provided on the semiconductor layer and is one of anode region and cathode region, a first conductive type second semiconductor region which is provided on the first semiconductor region and is the other of the anode region and cathode region, and a second conductive type semiconductor-buried region between the semiconductor layer and the first semiconductor region. The semiconductor-buried region has an opening. COPYRIGHT: (C)2006,JPO&NCIPI
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