| 摘要 |
PROBLEM TO BE SOLVED: To provide a surge-resistant semiconductor device by defining the disposition of trenches. SOLUTION: The semiconductor device includes the construction to prevent the gate of MOSFET from being broken down by surge, the ends of trenches are slantwise disposed in proximity to a gate pad so that the distance between the ends of the trenches where a gate electrode is formed, and gate wiring can be kept at a predetermined value. COPYRIGHT: (C)2006,JPO&NCIPI
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