| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device equipped with a ferroelectric capacitor capable of suppressing a characteristics deterioration in the ferroelectric capacitor due to the influence of hydrogen or moisture introduced into it in a manufacturing process. SOLUTION: The method of manufacturing the semiconductor device equipped with the ferroelectric capacitor comprises a first step of forming the ferroelectric capacitor on a semiconductor substrate 10, a second step of forming an insulating film 54 so as to cover the ferroelectric capacitor, a third step of carrying out a thermal treatment for eliminating hydrogen and/or moisture attached to the surface of the insulating film 54 or occluded in the insulating film 54, and a fourth step of forming a capacitor protecting film 56 of aluminum oxide on the insulating film 54. The third step of carrying out a thermal treatment and the fourth step of forming the capacitor protecting film are successively carried out in the same device kept in a closed atmosphere. COPYRIGHT: (C)2006,JPO&NCIPI
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