| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor chip for easily loading a bonding film for die-bonding to the rear surface of the semiconductor chip without giving any damage to each semiconductor chip divided with the preceiding dicing process. <P>SOLUTION: In this manufacturing method of semiconductor chip, a semiconductor wafer 2 is divided into individual semiconductor chips and a bonding film 6 is loaded to the rear surface of a semiconductor chip. The manufacturing method of semiconductor chip comprises a divided groove forming step for forming a divided groove 23 in the predetermined depth along a street from the front surface of the semiconductor wafer 2, a divided groove exploiting step for separating the wafer into individual semiconductor chips by grinding the rear surface to exploit the divided groove 23, a bonding film adhering step for adhering the bonding film 6 to the rear surface of the semiconductor wafer 2, a laser processing step for forming a reformed region along the divided groove 23 to the bonding film 6 by irradiating the laser beam 72 along the divided groove 23 from the rear surface side to the bonding film 6, and a bonding film breaking step for breaking the bonding film along the reformed region by giving a tension to the bonding film. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
